gan hybrid power amplifier HT2121-15M k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facilities : 919-677-8780 / sales@rfhicusa.com 1 / 8 version 1.0 product features applications ? e-phemt gaas + gan on sic ? 2-stage amplifier 50ohms matching ? surface mount hybrid type ? small size & mass ? high efficiency ? rf sub-systems ? base station ? repeater ? 4g/lte system ? small cell description the HT2121-15M is designed for lte repeater & rf sub-systems application frequencies from 2110 ~ 2170mhz this amplifier uses gan hemt technology which performs high breakdown voltage, high efficiency. high in/output impedance, high power density. electrical specifications @ v ds1 =5v, v ds2 =28v, ta=25 parameter unit min typ max condition frequency range mhz 2110 - 2170 zs = zl = 50 ohm power gain db 30 32 35 amp1 : idq1 = 140ma amp2 : idq2 = 105ma gain flatness - 0.6 - input return loss - -15 -7.5 pout @ average dbm - 33 - pout @ psat dbm 40.9 41.7 - pulse width=20us, duty10% aclr @ bw 10mhz lte (papr 7.5db) dbc - -36 -32 non dpd - -55 - with dpd drain efficiency % 24 26 - pout @ average ids1 ma - 140 - ids2 - 250 - supply voltage v - 5 - drive amp. (vds1) - -3.0 -2.0 gate bias (vgs2) - 28 - main bias (vds2) caution the drain voltage must be supplied to the device after the gate voltage is supplied turn on : turn on the gate voltage supply and last turn on the drain voltage supplies turn off : turn off the drain voltage and last turn off the gate voltage note 1. aclr measured pout=33dbm @ fc 10mhz / 9.015mhz lte 10mhz 1fa papr=7.5db @ 0.01% probability on ccdf, (dpd engine: optichron op6180) 2. ht series have internal dc blocking capacitors at the rf input and output ports mechanical specifications parameter unit typ remark mass g 2 - dimension L 20.5 x 15 x 3.5 - package type : np-1el
gan hybrid power amplifier HT2121-15M k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facilities : 919-677-8780 / sales@rfhicusa.com 2 / 8 version 1.0 absolute maximum ratings parameter unit rating symbol gate-source voltage v -10 ~ 0 vgs2 drain-source voltage v 7 vds1 50 vds2 gate current ma 4.0 igs2 operating junction temperature c 225 t j operating case temperature c -30 ~ 85 t c storage temperature c -40 ~ 100 t stg maximum rf input level dbm 20 pin operating voltage & input level parameter unit min typ max symbol drain voltage v 4.75 5 5.25 vds1 27.5 28 28.5 vds2 gate voltage (on-stage) v - -3 -2 vgs 2 gate voltage (off-stage) v - -8 - vgs 2 idq2 (control vgs2) ma 100 105 110 idq2 rf input level dbm - - 15 pin block diagram e-phemt gaas gan on sic
gan hybrid power amplifier HT2121-15M k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facilities : 919-677-8780 / sales@rfhicusa.com 3 / 8 version 1.0 application circuit part list location model no. spec. maker c4 1812c225k101ct 2.2uf / 100v walsin c1, c5 c3216x7r1c106k 10uf / 16v tdk c2, c3 201cha100jsle 10pf temex evaluation board ro4350b 2layer, 30mil rogers
gan hybrid power amplifier HT2121-15M k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facilities : 919-677-8780 / sales@rfhicusa.com 4 / 8 version 1.0 performance charts * bias condition @ idq1= 140ma, idq2= 105ma, ta=25 power gain vs. frequency psat vs. frequency 30 31 32 33 34 35 2.11 2.12 2.13 2.14 2.15 2.16 2.17 power gain [db] frequency[ghz] power gain @pout=33dbm 39 40 41 42 43 44 2.11 2.12 2.13 2.14 2.15 2.16 2.17 psat [dbm] frequency[ghz] psat @pulse width 20us (duty 10%) aclr vs. frequency efficiency vs. frequency -40 -39 -38 -37 -36 -35 2.11 2.12 2.13 2.14 2.15 2.16 2.17 aclr [dbc] frequency[ghz] aclr_l @pout=33dbm aclr_u @pout=33dbm 23 24 25 26 27 28 2.11 2.12 2.13 2.14 2.15 2.16 2.17 efficiency [%] frequency[ghz] drain efficienct @pout=33dbm ids1 vs. ids2 vs. frequency 50 100 150 200 250 300 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ids[ma] frequency[ghz] ids1, e-phemt ids2, gan
gan hybrid power amplifier HT2121-15M k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facilities : 919-677-8780 / sales@rfhicusa.com 5 / 8 version 1.0 performance charts * bias condition @ idq1= 140ma, idq2= 105ma, ta=25 power gain vs. output power efficiency vs. output power 25 27 29 31 33 35 30 31 32 33 34 35 36 power gain [db] output power[dbm] 2110mhz 2140mh z 2170mhz 15 20 25 30 35 40 45 30 31 32 33 34 35 36 efficiency [%] output power[dbm] 2110mhz 2140mhz 2170mhz aclr vs. output power ids1 vs. ids2 vs. output power -40 -38 -36 -34 -32 -30 -28 30 31 32 33 34 35 36 aclr [dbc] output power[dbm] 2110mhz 2140mhz 2170mhz *lte 10mhz (papr=7.5db) w/o dpd 100 150 200 250 300 350 400 30 31 32 33 34 35 36 ids[ma] output power[dbm] ids1 @2140mhz ids2 @2140mhz
gan hybrid power amplifier HT2121-15M k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facilities : 919-677-8780 / sales@rfhicusa.com 6 / 8 version 1.0 package dimensions (type: np-1el) * unit: mm[inch] | tolerance: 0.15[.006] top view side view bottom view pin description pin no function pin no function pin no function pin no function 1 rf input 4 n.c 8 gnd 11 gnd 2 gnd 5 vds1 9 gnd 12 gnd 3 gnd 6 vgs2 10 rf output 13 gnd - - 7 vds2 - - 14 gnd recommended pattern recommended mounting configuration * mounting configuration notes 1. for the proper performance of the device, ground / thermal via holes must be designed to remove heat. 2. to properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. we recommend the mounting scre ws be added near the heatsink to mount the board 3. in designing the necessary rf trace, width will depend upon the pcb material and construction. 4. use 1 oz. copper minimum thickness for the heatsink. 5. do not put solder mask on the backside of the pcb in the region where the board contacts the heatsink 6. we recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance .
gan hybrid power amplifier HT2121-15M k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facilities : 919-677-8780 / sales@rfhicusa.com 7 / 8 version 1.0 precautions this product is a gallium nitride transistor. the gallium nitride transistor requires a negative voltage bias which operates alongside a positive voltage bias. these biases are applied in accordance to the sequence during turn-on and turn-off. the pallet amplifier does not have a built-in bias sequence circ uit. therefore, users need to either apply positive voltages an d negative voltages in the required sequence, or ad d an external bias circuit to this amplifier. the required sequence for power supply is as follows. during turn-on 1. connect gnd. 2. apply vgs2. 3. apply vds1 and vds2 4. apply the rf power. during turn-off 1. turn off rf power. 2. turn off vds1 and vds2, and then, turn off the vgs2. 3. remove all connections. turn on turn off - sequence timing diagram -
gan hybrid power amplifier HT2121-15M k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facilities : 919-677-8780 / sales@rfhicusa.com 8 / 8 version 1.0 reflow profile * reflow oven settings zone a b c d e f temperature(c) 30 ~ 150 150 ~ 180 180 ~ 220 220 ~ 220 235 ~ 240 2 ~ 6 / sec drop belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec reflow cycle limit= 1time * measured reflow profile ordering information part number package design HT2121-15M -r (reel) -b (bulk) -evb (evaluation board) revision history part number release date version modification data sheet status HT2121-15M 2013.04.05 1.0 operating voltage & input level (2p) - HT2121-15M 2013.02.25 0.2 application circuit package dimensions reflow profile preliminary HT2121-15M 2013.01.15 0.1 initial release of data sheet preliminary rfhic corporation reserves the right to make changes to any prod ucts herein or to discontinue any product at any time without n otice. while product specifications have been thoroughly examined for reliability, rfhic corporation strongly recommends buy ers to verify that the information they are using is accurat e before ordering. rfhic corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including wi thout limitation consequential or incidental damages. rfhic products are not intended for use in life support equipment or application where malfunction of the product can be expect ed to result in personal injury or death. buyer uses or sells such products for any such unintended or unauthorized application, buyer shall i ndemnify, protect and hold rfhic corporat ion and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. sales, inquiries and support should be directed to the local au thorized geographic distributor for rfhic corporation. for custo mers in the us, please contact the us sales team at 919- 677-8780. for all other inquiries, please contact the international sales team at 82-31-250-5078.
|
